ZnGeAs2

Name: ZnGeAs2
Brand: MatWorld

semiconductor

· ZnGeAs2

ZnGeAs2 is a III-V ternary semiconductor compound combining zinc, germanium, and arsenic, belonging to the chalcopyrite crystal structure family. It is primarily investigated for infrared optoelectronic applications, particularly in the mid-to-long wavelength infrared range where it offers tunable bandgap properties compared to binary semiconductors like GaAs or InAs. The material is valued in research and specialized applications for its potential in infrared detectors, modulators, and nonlinear optical devices, though it remains less commercially mature than established alternatives; engineers would consider it for niche high-performance infrared systems where its specific wavelength response and optical properties provide advantages over conventional semiconductors.

infrared detectorsmid-infrared optoelectronicsnonlinear optical devicesresearch and developmentwavelength-specific sensorstunable optoelectronic components

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	8,774.8	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2500	-	DFT · OptB88vdW
Shear Modulus(G)	5,531.7	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1841	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.100	eV	Measured
↳	0.07900	eV	DFT · OptB88vdW
↳	1.073	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	98.89	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	25.82	-	DFT · OptB88vdW
↳	11.14	-	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.6189	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00241	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00280	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-121	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	232	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	32.51	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.1521	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnGeAs2 — Properties & Data | MatWorld

ZnGeAs2

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