ZnGeAs2
semiconductorZnGeAs2 is a III-V ternary semiconductor compound combining zinc, germanium, and arsenic, belonging to the chalcopyrite crystal structure family. It is primarily investigated for infrared optoelectronic applications, particularly in the mid-to-long wavelength infrared range where it offers tunable bandgap properties compared to binary semiconductors like GaAs or InAs. The material is valued in research and specialized applications for its potential in infrared detectors, modulators, and nonlinear optical devices, though it remains less commercially mature than established alternatives; engineers would consider it for niche high-performance infrared systems where its specific wavelength response and optical properties provide advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr) | — | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij) | — | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |