ZnGaPSe is a quaternary semiconductor ceramic compound combining zinc, gallium, phosphorus, and selenium—a mixed-anion system within the III-V semiconductor family. This material is primarily of research and developmental interest for optoelectronic and photonic applications, where its tunable bandgap and compound structure offer potential advantages in infrared detection, nonlinear optical devices, and wide-spectrum light-emitting systems compared to binary or ternary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1665 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.127 | eV | DFT · OptB88vdW | ||
| ↳ | 2.383 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 10.26 | - | DFT · OptB88vdW | ||
| ↳ | 6.974 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 14.91 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01350 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5611 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data