ZnGaPS is a quaternary semiconductor ceramic composed of zinc, gallium, phosphorus, and sulfur. This compound belongs to the family of III-V and II-VI hybrid semiconductors and is primarily investigated in research settings for optoelectronic and photonic applications. The material is notable for its potential band gap engineering capabilities, making it relevant for developers of specialized light-emitting devices, photodetectors, and wide-band-gap semiconductor technologies where tunable optical properties are advantageous over conventional binary or ternary semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1450 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.600 | eV | DFT · OptB88vdW | ||
| ↳ | 2.875 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 8.769 | - | DFT · OptB88vdW | ||
| ↳ | 6.340 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 6.140 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01010 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6489 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data