ZnGaO2N — Properties & Data | MatWorld

ZnGaO2N

ceramic

· ZnGaO2N

ZnGaO₂N is an experimental oxynitride ceramic compound combining zinc, gallium, oxygen, and nitrogen elements. This material belongs to the family of wide-bandgap semiconductors and functional ceramics, currently under research investigation rather than established in commercial production. The compound is of interest in photonic and electronic applications where the combination of cation chemistry and the oxynitride framework could offer tunable optoelectronic properties, though it remains in the early research phase with limited industrial deployment compared to more mature alternatives like GaN or ZnO.

Experimental semiconductor researchWide-bandgap optoelectronicsPhotocatalytic applicationsThin-film device researchHigh-temperature ceramics development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	2.003	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.340	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnGaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental