ZnGaAs is a ternary III-V semiconductor compound combining zinc, gallium, and arsenic elements. It belongs to the class of direct bandgap semiconductors and is primarily investigated for optoelectronic and high-frequency electronic applications where tailored bandgap energy and lattice parameters are required. The material is notable in research contexts for potential use in integrated photonic devices, high-efficiency solar cells, and radiation-hard electronics where compositional tuning between binary GaAs and ZnAs systems offers engineering flexibility.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 126.2 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | -0.5500 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 258.2 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2026 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000192 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000960 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | 10.33 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 22.78 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3534 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.1303 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data