ZnGa₃N₃O is an experimental mixed-metal ceramic compound combining zinc, gallium, nitrogen, and oxygen elements, representing a complex ternary/quaternary nitride-oxide system. This material remains primarily in research phase, with potential applications in wide-bandgap semiconductor and optoelectronic device platforms, where the combination of gallium nitride (GaN) characteristics with zinc and oxygen incorporation may enable novel electronic or photonic functionality. The material's development context suggests investigation into high-temperature stability, thermal management, or tunable band structure for next-generation power electronics or UV/visible light applications, though practical industrial use is not yet established.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2102 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.329 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02490 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.8014 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data