ZnGa₂Se₄ is a quaternary semiconductor compound belonging to the II-III-VI family of materials, combining zinc and gallium chalcogenides in a defect chalcopyrite structure. It is primarily investigated in research settings for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties make it a candidate for solar cells, photodetectors, and nonlinear optical devices. While not yet widely deployed in high-volume production, this material class is notable for bridging traditional binary semiconductors (like GaAs or ZnSe) and offering compositional flexibility to optimize performance for specific wavelength ranges and device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,140.9 | ksi | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 3,981.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1822 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.720 | eV | — | ||
| ↳ | 1.408 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 11.85 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5985 | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6472 | eV/atom | — |