ZnEuO3 — Properties & Data | MatWorld

ZnEuO3

semiconductor

· ZnEuO3

ZnEuO3 is an experimental rare-earth doped zinc oxide semiconductor compound, synthesized primarily for research into optoelectronic and photonic applications. While not yet commercialized in mainstream engineering, this material belongs to the family of wide-bandgap semiconductors and is investigated for potential use in UV-visible light emission, photocatalysis, and magnetic semiconductor devices where europium doping introduces luminescent and/or magnetic functionality to the zinc oxide host lattice.

experimental photoluminescence researchUV light-emitting devicesphotocatalytic applicationsmagnetic semiconductorsrare-earth dopant engineeringthin-film optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.185	eV	DFT · PBE
Magnetic Moment(μB)	0.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.942	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnEuO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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