ZnCu2SiTe4 is a quaternary semiconductor compound combining zinc, copper, silicon, and tellurium elements. This material belongs to the family of complex chalcogenide semiconductors, which are primarily investigated in research contexts for optoelectronic and thermoelectric applications. The combination of these elements positions it as a candidate material for specialized semiconductor devices where band gap engineering and carrier transport properties can be tuned, though it remains largely in the experimental phase rather than established commercial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.545 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.470 | eV | — | ||
| ↳ | 0.1660 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00500 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1567 | eV/atom | — |