ZnCaOFN is an oxynitride semiconductor compound incorporating zinc, calcium, oxygen, and nitrogen elements, representing an emerging class of wide-bandgap semiconductors being developed for next-generation optoelectronic and electronic device applications. This material is primarily in the research and development stage, with investigation focused on potential applications in UV-emitting devices, high-power electronics, and photocatalytic systems where the combined metal-oxynitride framework offers tunable electronic properties and enhanced thermal/chemical stability compared to conventional binary semiconductors. The inclusion of both anion species (O and N) allows bandgap engineering and improved charge carrier dynamics, making it a candidate for harsh-environment sensing and energy conversion technologies.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -6.883e-18 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.340 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data