ZnBiAs is a ternary semiconductor ceramic compound combining zinc, bismuth, and arsenic elements. This material belongs to the family of III-V and related semiconductors, though it remains largely experimental and primarily studied in research contexts for its potential electronic and optoelectronic properties. Interest in ZnBiAs centers on its possible applications in narrow-bandgap devices and photovoltaic systems where bismuth incorporation can modify band structure characteristics relative to conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,592.5 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.4000 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,046.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2589 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3032 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.2114 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data