ZnBeO2S

semiconductor

· ZnBeO2S

ZnBeO₂S is a mixed-anion semiconductor compound combining zinc, beryllium, oxygen, and sulfur elements, representing an experimental material in the chalcogenide and beryllium oxide semiconductor family. This quaternary compound is primarily of research interest for wide-bandgap semiconductor applications where tunable electronic and optical properties are sought; it has not achieved widespread industrial deployment but is investigated for potential use in UV optoelectronics, high-temperature electronics, and specialized photovoltaic devices where the combination of beryllium oxide's thermal stability and sulfide semiconductors' band engineering could offer advantages over conventional alternatives.

UV light-emitting devices (research)Wide-bandgap semiconductor researchHigh-temperature electronics (experimental)Photovoltaic absorber layers (development stage)Optical window coatings (exploratory)Radiation-resistant semiconductors (theoretical)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.300	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.0000447	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.180	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnBeO2S — Properties & Data | MatWorld

ZnBeO2S

Electrical Properties

Other Properties

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