ZnAs is a binary III-V compound semiconductor composed of zinc and arsenic, belonging to the family of zinc chalcogenides and arsenides. It is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its direct bandgap and carrier mobility characteristics offer potential advantages for light-emitting devices, photodetectors, and solar cells. Though less commercially established than related compounds like GaAs or CdZnTe, ZnAs remains of interest to materials researchers exploring wide-bandgap semiconductors for ultraviolet and visible-spectrum applications, as well as for high-temperature or radiation-resistant device designs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2084 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.9000 | eV | Measured | ||
| ↳ | 0.2850 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 22.34 | - | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 0.01667 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.01667 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00373 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00163 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -173.9 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 137.7 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1377 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data