ZnAs is a binary III-V compound semiconductor composed of zinc and arsenic, belonging to the family of zinc chalcogenides and arsenides. It is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its direct bandgap and carrier mobility characteristics offer potential advantages for light-emitting devices, photodetectors, and solar cells. Though less commercially established than related compounds like GaAs or CdZnTe, ZnAs remains of interest to materials researchers exploring wide-bandgap semiconductors for ultraviolet and visible-spectrum applications, as well as for high-temperature or radiation-resistant device designs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2084 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.9000 | eV | — | ||
| ↳ | 0.2850 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -173.9 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1377 | eV/atom | — |