ZnAs₃ is a zinc arsenide compound ceramic belonging to the III–V semiconductor family, composed of zinc and arsenic in a 1:3 stoichiometric ratio. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its wide bandgap and semiconductor properties make it a candidate for UV-sensitive detectors and specialized photonic devices. While less common than conventional arsenide semiconductors, ZnAs₃ represents an emerging compound in materials research for next-generation high-energy photon detection and possible integration into heterojunction device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2274 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4788 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.3782 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data