ZnAs

semiconductor
· ZnAs

ZnAs is a binary III-V compound semiconductor composed of zinc and arsenic, belonging to the family of zinc chalcogenides and arsenides. It is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its direct bandgap and carrier mobility characteristics offer potential advantages for light-emitting devices, photodetectors, and solar cells. Though less commercially established than related compounds like GaAs or CdZnTe, ZnAs remains of interest to materials researchers exploring wide-bandgap semiconductors for ultraviolet and visible-spectrum applications, as well as for high-temperature or radiation-resistant device designs.

photodetectorsoptoelectronic researchsolar cells (experimental)ultraviolet light emissionhigh-temperature semiconductor devicesradiation-resistant electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Density(ρ)
kg/m³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
eV
eV
Magnetic Moment(μB)
µB
Seebeck Coefficient(S)
µV/K
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
eV/atom
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.