ZnAlN3 is a ternary nitride ceramic compound combining zinc, aluminum, and nitrogen elements, belonging to the family of wide-bandgap semiconductors and advanced ceramics. This material is primarily of research and development interest rather than established commercial production, with potential applications in high-temperature electronics, optoelectronics, and wear-resistant coatings where the combination of nitride hardness and semiconductor properties could offer advantages over binary nitrides like AlN or GaN. Engineers would consider this material in emerging applications requiring simultaneous thermal stability, electrical functionality, and mechanical durability, though material availability and processing maturity remain limiting factors compared to established alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.9152 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.860 | eV/atom | — |