Zn8 P16
semiconductorZn₈P₁₆ is a zinc phosphide compound semiconductor belonging to the III–V analogue family, composed of zinc and phosphorus in a fixed stoichiometric ratio. This material is primarily of research and developmental interest for optoelectronic and photovoltaic applications, where its direct bandgap and semiconductor properties make it a candidate for light emission, detection, or energy conversion devices. While less commercially established than gallium arsenide or indium phosphide, zinc phosphide compounds are investigated for cost-effective alternatives in space-grade solar cells, UV detectors, and integrated photonic circuits due to their potential for improved radiation hardness and abundance of constituent elements.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.473 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2640 | eV/atom | — |