Zn8As4O16 is an oxoarsenide semiconductor compound containing zinc and arsenic in a mixed-valence oxide structure. This material belongs to the family of complex metal arsenates and represents a research-phase compound of interest in solid-state chemistry and materials science rather than a widely commercialized engineering material. Its potential applications span optoelectronic devices, photocatalysis, and specialized sensor technologies where the semiconductor band gap and crystal structure may enable functionality; however, the compound remains primarily studied in academic and laboratory settings, with industrial adoption limited by synthesis complexity, arsenic handling concerns, and competing alternatives in most practical device categories.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00970 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4010 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data