Zn₆Sn₄O₁₄ is a mixed-metal oxide semiconductor compound combining zinc and tin oxides in a fixed stoichiometric ratio. This material belongs to the family of transparent conducting oxides (TCOs) and wide-bandgap semiconductors, primarily studied for optoelectronic and sensing applications where conventional single-oxide systems show limitations. The compound is of particular research interest for thin-film transistors, gas sensors, and photocatalytic applications due to the synergistic effects of combining zinc oxide and tin oxide phases, offering potential advantages in stability and tunability compared to binary ZnO or SnO₂ alone.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.246 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.640 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data