Zn5.5Ga1Sn0.5O8

semiconductor

· Zn5.5Ga1Sn0.5O8

Zn₅.₅Ga₁Sn₀.₅O₈ is a ternary oxide semiconductor compound combining zinc, gallium, and tin oxides in a mixed-valence structure. This is a research-stage material being investigated for transparent conductive oxide (TCO) and wide-bandgap semiconductor applications, where gallium and tin dopants modify the electronic and optical properties of the zinc oxide host lattice. The compound represents an experimental approach to tuning carrier concentration and transparency for next-generation optoelectronic devices, positioning it as a candidate alternative to conventional TCO materials like ITO (indium tin oxide) in applications where cost, availability, or specific electronic properties are critical.

transparent conductive coatingsthin-film optoelectronicsdisplay and touch-screen substratesphotovoltaic buffer layerswide-bandgap semiconductorsresearch and development materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.990	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn5.5Ga1Sn0.5O8

Electrical Properties

Regulatory Screening

Environmental

Export Control