Zn5.5Ga1Sn0.5O8
semiconductor· Zn5.5Ga1Sn0.5O8
Zn₅.₅Ga₁Sn₀.₅O₈ is a ternary oxide semiconductor compound combining zinc, gallium, and tin oxides in a mixed-valence structure. This is a research-stage material being investigated for transparent conductive oxide (TCO) and wide-bandgap semiconductor applications, where gallium and tin dopants modify the electronic and optical properties of the zinc oxide host lattice. The compound represents an experimental approach to tuning carrier concentration and transparency for next-generation optoelectronic devices, positioning it as a candidate alternative to conventional TCO materials like ITO (indium tin oxide) in applications where cost, availability, or specific electronic properties are critical.
transparent conductive coatingsthin-film optoelectronicsdisplay and touch-screen substratesphotovoltaic buffer layerswide-bandgap semiconductorsresearch and development materials
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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