Zn₄W₆O₁₆ is a mixed-metal oxide semiconductor composed of zinc and tungsten oxides, belonging to the class of complex ternary oxide semiconductors. This material is primarily of research and developmental interest rather than established in high-volume manufacturing; it represents exploration of tungstate-based semiconductors for potential photocatalytic and electronic applications. The compound combines the chemical stability of tungsten oxides with zinc's role as a dopant or structural modifier, making it relevant for engineers investigating advanced semiconductor materials with tailored band gaps or photocatalytic activity.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6469 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.924 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data