Zn₄Si₄N₈ is a quaternary nitride semiconductor compound combining zinc, silicon, and nitrogen in a fixed stoichiometric ratio. This material belongs to the family of metal nitride semiconductors and represents an emerging research compound rather than an established commercial product; it is being investigated for its potential as a wide-bandgap semiconductor with applications requiring thermal stability and chemical resistance. The zinc–silicon–nitrogen system offers design flexibility for tuning electronic and optoelectronic properties, positioning it as a candidate for next-generation power electronics, UV optics, or high-temperature sensing applications where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 28,877 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 17,569.9 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.534 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8930 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data