Zn₄P₆N₁₂O is a zinc phosphorus oxynitride semiconductor compound, representing an emerging class of wide-bandgap materials that combine phosphide and nitride chemistry for potential electronic and optoelectronic applications. This material family is primarily of research interest, explored for its structural stability and semiconducting properties in high-performance device architectures where conventional III-V or II-VI semiconductors face limitations. The incorporation of oxygen into the zinc phosphide-nitride lattice offers tunable electronic properties and potential thermal stability advantages relevant to power electronics and UV-emitting applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23,041.7 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 12,615.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.050 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5970 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data