Zn₄Ni₂N₄ is an experimental quaternary nitride semiconductor compound combining zinc, nickel, and nitrogen elements, representing an emerging material within the transition metal nitride family. This research compound is being investigated for potential applications in optoelectronic devices, high-temperature electronics, and catalysis, where the unique electronic properties arising from its mixed-metal composition could offer advantages over conventional binary nitrides like GaN or single-phase alternatives. The material remains primarily in the research and development phase, with its practical utility dependent on advances in synthesis methods and demonstration of scalable manufacturing pathways.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17,536.7 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 5,039.6 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03320 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1190 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data