Zn4In4S10 is a quaternary semiconductor compound combining zinc, indium, and sulfur elements, belonging to the family of III-VI semiconductors with potential for optoelectronic and photovoltaic applications. This material is primarily of research and developmental interest rather than established in high-volume industrial production, as compounds in this family are investigated for their tunable bandgap properties and light-emitting or light-absorbing characteristics. The material's potential lies in next-generation solar cells, photodetectors, and semiconductor devices where alternatives like binary zinc sulfide or cadmium telluride may face performance or toxicity limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,980.3 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,131.8 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4807 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6700 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data