Zn₄Ge₄N₈ is a quaternary nitride semiconductor compound combining zinc, germanium, and nitrogen in a fixed stoichiometric ratio. This material belongs to the broader family of III-V and related nitride semiconductors, which are primarily of research interest for advanced optoelectronic and high-temperature applications. While not yet widely deployed in commercial products, nitride semiconductors like this are investigated for potential use in wide-bandgap electronics, UV emitters, and high-power/high-frequency devices where conventional semiconductors reach their performance limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 24,385.6 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 14,115.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.866 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2820 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data