Zn₄C₈S₈N₈ is a mixed-anion semiconductor compound combining zinc with carbon, sulfur, and nitrogen in a structured lattice—representing an experimental quaternary material from the broader family of wide-bandgap and chalcogenide semiconductors. This research-phase compound is being investigated for potential applications in optoelectronics, photocatalysis, and solid-state devices where its tunable electronic structure and multi-anion framework could enable novel band-gap engineering; it remains primarily a laboratory material without established commercial production or deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.652 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.01200 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data