Zn₄Bi₄O₁₀ is an oxide semiconductor compound combining zinc and bismuth in a layered crystal structure, belonging to the family of mixed-metal oxides used in functional electronic and photonic applications. While primarily a research material, compounds in this family are investigated for photocatalysis, gas sensing, and optoelectronic devices where the bismuth-zinc oxide system offers tunable band gaps and potential for visible-light activity. Engineers consider such materials when conventional single-oxide semiconductors (like ZnO or Bi₂O₃) lack the required catalytic efficiency or spectral response, though processing and reproducibility remain development challenges.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,070.3 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,442.2 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.541 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.357 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data