Zn₄Bi₄As₄O₂₀ is a quaternary mixed-metal oxide semiconductor compound combining zinc, bismuth, and arsenic in a structured lattice. This is a research-phase material studied primarily for its potential in photovoltaic and optoelectronic applications, where the combination of elements can influence bandgap tuning and charge transport behavior. Interest in this compound family centers on alternative absorber materials for thin-film solar cells and possibly photocatalytic or sensing devices, though it remains largely in the exploratory phase compared to established semiconductor platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.882 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.392 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data