Zn₄.₅Ga₁Sn₀.₅O₇ is a mixed-metal oxide semiconductor belonging to the wide-bandgap oxide family, specifically a ternary zinc-gallium-tin oxide compound with potential for transparent conductive and optoelectronic applications. This material is primarily of research interest rather than established commercial production, studied for its tunable electronic properties that could offer advantages over conventional indium tin oxide (ITO) and other transparent conducting oxides. The inclusion of gallium and tin into the zinc oxide matrix modifies charge carrier concentration and optical transparency, making it relevant for next-generation displays, photovoltaics, and high-temperature electronics where traditional oxide semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.000 | eV | — |