Zn3V2TeO10

semiconductor

· Zn3V2TeO10

Zn₃V₂TeO₁₀ is a mixed-metal oxide semiconductor combining zinc, vanadium, and tellurium oxides in a ternary compound system. This material remains primarily in the research phase and is studied for potential applications in optoelectronics and solid-state device development, where the combined electronic properties of vanadium and tellurium oxides offer tunable band gap characteristics and photocatalytic potential compared to single-component oxides.

photocatalytic applicationsoptoelectronic researchthin-film semiconductorsmaterials researchsolid-state electronicsfunctional ceramics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.960	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn3V2TeO10

Electrical Properties

Regulatory Screening

Environmental

Export Control