Zinc phosphide (Zn₃P₂) is a III-V semiconductor compound used primarily in optoelectronic and photovoltaic applications where direct bandgap properties are advantageous. While less common than gallium arsenide or indium phosphide in mainstream production, Zn₃P₂ is investigated for high-efficiency solar cells, infrared detectors, and light-emitting devices due to its favorable band structure and potential cost advantages; it remains largely in research and specialized applications rather than high-volume manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1624 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.150 | eV | — | ||
| ↳ | 0.3050 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -106.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.3296 | eV/atom | — | ||
| ↳ | -0.2072 | eV/atom | — |