Zn₃InAgS₅ is a quaternary semiconductor compound containing zinc, indium, silver, and sulfur, belonging to the family of I-III-VI₂ and related multinary chalcogenide semiconductors. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its tunable bandgap and crystal structure make it a candidate for thin-film solar cells, photodetectors, and light-emitting devices. Its combination of earth-abundant and rare elements positions it as an exploratory alternative to conventional III-V semiconductors, though it remains largely in development phase rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.397 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.170 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02360 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6918 | eV/atom | — |