Zinc indium sulfide (Zn₃In₂S₆) is a ternary semiconductor compound combining zinc, indium, and sulfur elements. This material is primarily of research and development interest for optoelectronic and photonic applications, where its wide bandgap and sulfide-based structure offer potential for UV-visible light emission and detection. While not yet widely deployed in high-volume commercial products, Zn₃In₂S₆ and related ternary chalcogenides are being investigated as alternatives to binary semiconductors for applications requiring tunable optical properties or improved defect tolerance.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1530 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 3.050 | eV | Measured | ||
Thermoelectric Power Factor(PF)2 entries | 0.000237 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000910 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -55.37 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 50.51 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06140 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.7016 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data