Zinc indium sulfide (Zn₃In₂S₆) is a ternary semiconductor compound combining zinc, indium, and sulfur elements. This material is primarily of research and development interest for optoelectronic and photonic applications, where its wide bandgap and sulfide-based structure offer potential for UV-visible light emission and detection. While not yet widely deployed in high-volume commercial products, Zn₃In₂S₆ and related ternary chalcogenides are being investigated as alternatives to binary semiconductors for applications requiring tunable optical properties or improved defect tolerance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1530 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.050 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Seebeck Coefficient(S) | -55.37 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06140 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7016 | eV/atom | — |