Zn₃As₂ is a III-V semiconductor compound formed from zinc and arsenic, belonging to the family of binary semiconductors used in optoelectronic and high-frequency applications. Historically studied for infrared detectors and photovoltaic devices, this material has seen limited commercial adoption compared to more mature alternatives like GaAs or InAs, though it remains relevant in research contexts for specialized infrared sensing and potential thermoelectric applications where its unique band structure offers advantages.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.437 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.100 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1345 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.2792 | eV/atom | — | ||
| ↳ | 0.02434 | eV/atom | — |