Zn₃Te₁As₂Pb₃O₁₄ is a complex mixed-metal oxide semiconductor combining zinc, tellurium, arsenic, and lead oxides in a quaternary system. This is a specialized research compound rather than a commercial material, belonging to the broader family of multinary oxide semiconductors being investigated for potential optoelectronic and photovoltaic applications where tunable bandgaps and mixed-valence chemistry could offer advantages over simpler binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.075 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.430 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data