Zn₃In₂S₆ is a wide-bandgap semiconductor compound belonging to the I–III–VI ternary sulfide family, combining zinc and indium with sulfur. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its tunable bandgap and potential for thin-film device fabrication make it attractive compared to binary semiconductors like ZnS or InS. The compound has been explored in early-stage studies for photocatalysis, light-emitting devices, and next-generation solar cells, though it remains largely experimental and not yet deployed in mainstream commercial applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05900 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7020 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data