Zn3.5Ga1Sn0.5O6

semiconductor

· Zn3.5Ga1Sn0.5O6

Zn₃.₅Ga₁Sn₀.₅O₆ is an experimental mixed-metal oxide semiconductor based on the zinc gallate and zinc stannate family, combining zinc, gallium, and tin cations in a single crystalline phase. This compound is primarily of research interest for transparent conducting oxides (TCOs) and wide-bandgap semiconductor applications, where its multi-cation structure offers potential for tuning electrical and optical properties beyond conventional single-metal oxide systems. The material remains in the development stage, with potential advantages in photovoltaic devices, gas sensors, and optoelectronic applications where transparent conductivity and chemical stability are required.

transparent conducting electrodes (research)wide-bandgap semiconductors (experimental)photovoltaic devices (development)gas sensing (emerging)optoelectronic coatings (exploratory)thin-film electronics (laboratory scale)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.990	eV	—

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Regulatory Screening

Environmental

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Zn3.5Ga1Sn0.5O6

Electrical Properties

Regulatory Screening

Environmental

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