Zn2TeSe is a mixed chalcogenide ceramic compound combining zinc with tellurium and selenium, belonging to the II-VI semiconductor material family. This is primarily a research and development material explored for optoelectronic and photonic applications, particularly in infrared detection, nonlinear optical devices, and wide-bandgap semiconductor systems where the tellurium-selenium composition offers tunable electronic properties. Engineers consider this material class when conventional binary semiconductors (like ZnTe or ZnSe alone) cannot meet performance requirements for specific wavelength ranges or require enhanced material stability in demanding environments.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1918 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.3850 | eV | DFT · OptB88vdW | ||
| ↳ | 1.684 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 9.182 | - | DFT · OptB88vdW | ||
| ↳ | 6.289 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 29.47 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5734 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data