Zn2InGaO5 is an ternary oxide ceramic compound combining zinc, indium, and gallium oxides, representing a material class of interest in semiconductor and optoelectronic research. This compound is primarily investigated for applications requiring transparent conductive oxide (TCO) functionality or wide-bandgap semiconductor behavior, positioning it as an alternative to conventional indium tin oxide (ITO) in emerging device architectures. The material's mixed-metal oxide composition offers potential advantages in tailoring electronic and optical properties for next-generation displays, sensors, and photonic devices, though it remains largely in the research and development phase rather than mainstream industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22,728.9 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3500 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 7,729.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2173 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.372 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 4.531 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01080 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.748 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data