Zn2InCuSe4 is a quaternary semiconductor compound belonging to the chalcogenide family, combining zinc, indium, copper, and selenium in a structured lattice. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties make it a candidate for thin-film solar cells, photodetectors, and light-emitting devices. While not yet widely commercialized, quaternary chalcogenides like this compound offer engineers the potential to engineer bandgap and carrier mobility beyond what simpler binary or ternary semiconductors provide, particularly for next-generation photovoltaic architectures seeking alternatives to conventional silicon or CdTe-based systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.327 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.100 | eV | — | ||
| ↳ | 0.1310 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5797 | eV/atom | — |