Zn₂In₂S₅ is a ternary semiconductor compound combining zinc, indium, and sulfur—part of the I-III-VI₂ semiconductor family. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties make it attractive for next-generation thin-film solar cells, light-emitting devices, and photocatalytic applications. Engineers consider this compound as an alternative to traditional CdTe or CIGS absorber layers because of its lower toxicity profile and potential for lattice engineering through compositional variation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,980 | ksi | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 3,131.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1540 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.950 | eV | — | ||
| ↳ | 0.02000 | eV | — | ||
Piezoelectric Modulus(eij) | 1.045 | C/m² | — | ||
Seebeck Coefficient(S) | -53.45 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06610 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6694 | eV/atom | — |