Zn2GeSe3 is a ternary semiconductor ceramic compound composed of zinc, germanium, and selenium. This material belongs to the family of II-IV-VI semiconductors and is primarily of research interest for optoelectronic and photovoltaic applications where wide bandgap semiconductors are needed. The material's potential utility derives from its semiconductor properties in the infrared and visible spectrum regions, making it relevant for specialized optical devices and energy conversion systems where conventional materials may be limited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1689 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.279 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 9.618 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1100 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4554 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data