Zn₂GeS₃ is a quaternary chalcogenide ceramic compound combining zinc, germanium, and sulfur elements, belonging to the family of semiconducting sulfide ceramics. This material is primarily of research interest for optoelectronic and photonic applications, particularly in infrared wavelength regions where it offers potential advantages in transparency and nonlinear optical properties compared to traditional sulfide glasses or crystalline semiconductors. Its development is driven by applications requiring wide bandgap semiconductors and materials for mid-infrared optical devices, though industrial adoption remains limited and it is not yet a mainstream engineering material.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.690 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.182 | eV | DFT · OptB88vdW | ||
| ↳ | 1.696 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 7.913 | - | DFT · OptB88vdW | ||
| ↳ | 5.990 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 29.26 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1293 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5818 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data