Zn₂GaSe₄ is a II-III-VI semiconductor ceramic compound combining zinc, gallium, and selenium in a defect tetragonal structure. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in optoelectronic and photovoltaic devices where its semiconductor bandgap properties could enable light emission, detection, or energy conversion. The compound belongs to the family of ternary chalcogenides studied for next-generation thin-film solar cells, light-emitting devices, and radiation detectors, offering an alternative composition space to more conventional III-V or II-VI materials when specific optical or electronic performance is required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.060 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.09250 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5388 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data