Zn₂Ga₂S₅ is a quaternary semiconductor ceramic compound combining zinc, gallium, and sulfur elements, belonging to the family of II-VI and III-VI compound semiconductors. This material is primarily investigated in research contexts for optoelectronic and photonic applications, where its direct bandgap and crystalline structure make it relevant for light emission, detection, and energy conversion devices. While not yet established in high-volume industrial production, Zn₂Ga₂S₅ represents the broader class of mixed-metal sulfide semiconductors that offer tunable electronic properties and potential cost advantages over single-element alternatives in niche photonic and sensing applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1450 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.8130 | eV | DFT · OptB88vdW | ||
| ↳ | 1.947 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 8.240 | - | DFT · OptB88vdW | ||
| ↳ | 5.921 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 24.10 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1275 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6969 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data