Zn₂Te₂Mo₂O₁₂ is a mixed-metal oxide semiconductor combining zinc, tellurium, and molybdenum elements, belonging to the family of complex oxide semiconductors. This compound is primarily investigated in materials research for photocatalytic and optoelectronic applications, where the dual-metal composition can engineer band gaps and light absorption characteristics; it represents an emerging materials system rather than an established industrial standard, with potential relevance to researchers developing next-generation photocatalysts, sensors, or visible-light-active materials for environmental remediation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.985 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.692 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data