Zn₂Sn₄O₈ is a ternary oxide semiconductor compound combining zinc and tin oxides, belonging to the family of mixed-metal oxides used in electronic and photonic applications. This material is primarily investigated in research settings for transparent conducting oxides, gas sensing, and photocatalytic applications, where its wide bandgap and multi-component structure offer tunable electrical and optical properties compared to single-phase oxides. Engineers consider this material when designing devices requiring combined transparency and conductivity, or when the chemical activity of both zinc and tin oxides can be leveraged synergistically in thin-film or nanostructured forms.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 101.6 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 23.25 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00190 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.311 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data